Band-gap shift in heavily doped n-type Al0.3Ga0.7As alloys

The band-gap shift of heavily Si-doped Al0.3Ga0.7As alloys has been investigated theoretically and experimentally at low temperature. The calculations are carried out within a framework of the random phase approximation and the electron-electron, electron-optical phonon, and electron-ion interactions have been taken into consideration. The experimental data have been obtained with photoluminescence and photoluminescence excitation spectroscopy. Theoretical and experimental results fall closely together in a wide range of impurity concentration.