Slow state characterization by measurements of current-voltage characteristics of MOS capacitors

被引：8

作者：

Dimitrijev, S ^{[1
]}

Tanner, P ^{[1
]}

Yao, ZQ ^{[1
]}

Harrison, HB ^{[1
]}

机构：

[1] AWA MICROELECT,HOMEBUSH,NSW 2140,AUSTRALIA

来源：

MICROELECTRONICS AND RELIABILITY | 1997年 / 37卷 / 07期

关键词：

D O I：

10.1016/S0026-2714(96)00276-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Slow current transients in metal-oxide-semiconductor (MOS) capacitors have been observed and related to slow states located in the oxide within tunneling distance of the silicon. This paper describes slow-state related current transients induced by voltage stepping as the basis of the recently developed technique for both energy-level and time-response characterization of the slow states. The voltage stepping measurements are compared to the standard linear voltage ramping technique. (C) 1997 Elsevier Science.

引用

页码：1143 / 1146

页数：4

共 7 条

[1] EFFECTS OF OXIDE TRAPS, INTERFACE TRAPS, AND BORDER TRAPS ON METAL-OXIDE-SEMICONDUCTOR DEVICES [J].