One-dimensional β-Ga2O3 nanostructures on sapphire (0001):: Low-temperature epitaxial nanowires and high-temperature nanorod bundles

Well-aligned Ga2O3 nanowires were formed on the sapphire (0001) SLibstrates at temperatures of 650-450 degrees C using a single precursor of gallium acetylacetonate via a vapor-liquid-solid (VLS) method. StrUctural analyses reveal that the well-aligned Ga2O3 nanowires are expitaxially grown on the sapphire (0001) with Ga2O3/sapphire orientational relationship [(2) over bar 01]parallel to[0001] and [2 (1) over bar1]parallel to[11 (2) over bar0]. In addition, formation of the flowerlike Ga2O3 nanorod bundles at a temperature of 750 degrees C via the vapor-solid (VS) mechanism was also demonstrated. Instead of being catalysts in the VLS method, the b Au nanoparticles are proposed to play a role in sinking the Ga vapor for forming the nuclei of Ga2O3 nanorods in the VS method.