Designed emitter states in resonant tunneling through quantum dots

被引：25

作者：

Bryllert, T ^{[1
]}

Borgstrom, M ^{[1
]}

Sass, T ^{[1
]}

Gustafson, B ^{[1
]}

Landin, L ^{[1
]}

Wernersson, LE ^{[1
]}

Seifert, W ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 15期

关键词：

Semiconductor quantum dots - Nanocrystals - Temperature distribution;

D O I：

10.1063/1.1469686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resonant tunneling through a single layer of self-assembled quantum dots (QDs) is compared to tunneling through two layers of vertically aligned (stacked) dots. The difference can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. The temperature dependence of current peaks originating in tunneling through individual QDs and individual stacks is used to clarify this point. In addition, we show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be analyzed in a resonant tunneling experiment. (C) 2002 American Institute of Physics.

引用

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页码：2681 / 2683

页数：3

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