Electron beam pre-patterning for site-control of self-assembled InAs quantum dots on InP surfaces

被引：9

作者：

Borgström, M ^{[1
]}

Bryllert, T ^{[1
]}

Gustafson, B ^{[1
]}

Johansson, J ^{[1
]}

Sass, T ^{[1
]}

Wernersson, LE ^{[1
]}

Seifert, W ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 05期

基金：

瑞典研究理事会;

关键词：

MOVPE; InP/InAs quantum dots; self-assembling; resonant tunneling;

D O I：

10.1007/s11664-001-0087-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A site control technique for individual InAs quantum dots (QDs) formed by self-assembling has been developed, using scanning electron microscope (SEM) assisted nano-deposition and metal organic vapor phase epitaxy (MOVPE). In a first step we characterize a device with randomly distributed InAs QDs on InP, using resonant tunneling and transmission electron microscopy (TEM). Secondly, we use nano-scale deposits, created at the focal point, of the electron beam on an InP based heterostructure, as "nano growth masks". Growth of a thin InP layer produces nano-holes above the deposits. The deposits are removed by oxygen plasma etching. When InAs is supplied on this surface, QDs are self-assembled at the hole sites, while no InAs dots are observed in the flat surface region. A vertical single electron tunneling device is proposed, using the developed technique.

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页码：482 / 486

页数：5

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