Band offsets of high dielectric constant gate oxides on silicon

被引：151

作者：

Robertson, J ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 303卷 / 01期

关键词：

D O I：

10.1016/S0022-3093(02)00972-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High dielectric constant oxides will soon be needed to replace silicon dioxide as the gate dielectric material in complementary metal oxide semiconductor technology. The oxides must have band offsets with silicon of over 1 eV for both electrons and holes in order to have low leakage currents. We have calculated the band offsets for many candidate oxides using the method of charge neutrality levels. Ta2O5 and SrTiO3 have small or vanishing conduction band offsets on Si. La2O3, Y2O3, Gd2O3, ZrO2, HfO2, Al2O3 and silicates like ZrSiO4 have offsets over 1.4 eV for both electrons and holes, making them better gate dielectrics. Zirconates are better than titanates as they have wider gaps. (C) 2002 Elsevier Science Ltd. All rights reserved.

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页码：94 / 100

页数：7

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