Physics and modeling of Ge-on-Insulator MOSFETs

被引：11

作者：

Chin, A ^{[1
]}

Kao, HL ^{[1
]}

Tseng, YY ^{[1
]}

Yu, DS ^{[1
]}

Chen, CC ^{[1
]}

McAlister, SP ^{[1
]}

Chi, CC ^{[1
]}

机构：

[1] Univ Syst Taiwan, NCTU, Dept Elect Engn, NanoSci Tech Ctr, Hsinchu, Taiwan

来源：

PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2005年

关键词：

D O I：

10.1109/ESSDER.2005.1546641

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have used process and device simulation tools (T-Supreme and Medici) to analyze the measured DC characteristics of Ge-on-Insulator (GOI) MOSFETs. The GOI devices have higher drive current than do their Si counterparts, due to the smaller effective mass (m) and smaller Ge energy bandgap - however this also causes a larger off-state I-ds leakage current. The simulations predict that the GOI MOSFETs have better RF gain and noise performance compared with Si devices. This is important for high speed operation as down-scaling continues.

引用

页码：285 / 288

页数：4

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