Quantum well and cavity structures grown on (110)GaAs by MBE

被引：5

作者：

Hey, R. ^{[1
]}

Jahn, U. ^{[1
]}

Wan, Qian ^{[1
]}

Trampert, A. ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9 | 2008年 / 5卷 / 09期

关键词：

D O I：

10.1002/pssc.200779235

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural perfection of (In,Ga)As- and GaAs quantum wells and distrubuted Bragg reflectors for cavity structures on (110)GaAs grown by molecular-beam epitaxy is investigated. The relaxation mechanism of accumulated elastic strain is studied by transmission electron microscopy. Defferences to structures with (001) orientation are addressed.The use of short-period superlattices for Bragg mirrors stabilizes the structures grown on (110)GaAs against relaxation-based defect formation as well as degradation of bare sidewalls shen exposed to ambient air. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2917 / 2919

页数：3

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