ZrO2 flexible printed resistive (memristive) switch through electrohydrodynamic printing process

被引：46

作者：

Awais, Muhammad Naeem ^{[1
]}

Kim, Hyung Chan ^{[2
]}

Doh, Yang Hui ^{[2
]}

Choi, Kyung Hyun ^{[1
]}

机构：

[1] Jeju Natl Univ, Dept Mechatron Engn, Jeju Si 690756, Jeju, South Korea

[2] Jeju Natl Univ, Dept Elect Engn, Jeju Si 690756, Jeju, South Korea

来源：

THIN SOLID FILMS | 2013年 / 536卷

关键词：

Bipolar switching; Electroforming process; Electrohydrodynamic printing; Flexible electronics; Memristor; Resistive switching; MEMORY APPLICATIONS; GRAPHENE OXIDE; THIN-FILMS; DEVICES; FABRICATION; ATOMIZATION; SYSTEMS;

D O I：

10.1016/j.tsf.2013.04.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrohydrodynamic (EHD) printing technique has been deployed to fabricate flexible printed resistive (memristive) switch in a metal-insulator-metal sandwich structure of Ag/ZrO2/Ag on a polyimide substrate under normal room conditions. The top and bottom electrodes were deposited through the jetting of EHD printing and the active layer of ZrO2 between two electrodes was deposited through the atomization of EHD printing process. The achieved dimensions of the printed device were around 100 mu m x 100 mu m with the thickness of the bottom electrode, switching layer and top electrode were around 230 nm, 680 nm and 420 nm respectively. The fabricated device showed stable bipolar memristive switching behavior around +/- 3 V. The reversible resistive switching behavior was measured with the high OFF/ON ratio of 100:1. The device kept on exhibiting memristive characteristics after being physically flexed over 500 times that shows its viability for flexible electronics applications. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：308 / 312

页数：5

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