Temperature dependence of the thermo-optic coefficient in crystalline silicon between room temperature and 550 K at the wavelength of 1523 nm

被引:171
作者
Cocorullo, G [1 ]
Della Corte, FG [1 ]
Rendina, I [1 ]
机构
[1] Univ Calabria, DEIS, I-87036 Cosenza, Italy
关键词
D O I
10.1063/1.123337
中图分类号
O59 [应用物理学];
学科分类号
摘要
The temperature dependence of the thermo-optic coefficient for crystalline silicon has been measured in the temperature range between room temperature and 550 K at the wavelength of 1523 nm by means of an interferometric technique. This technique, which requires a very simple experimental setup, is based on the observation of the fringe pattern produced by temperature changes in a Fabry-Perot resonator. Measurement results indicate that the thermo-optic coefficient is independent on the sample doping and crystal plane orientation. The experimental data appear to be in agreement with the few values reported to date at this important wavelength. The temperature dependence of the excitonic band gap is also calculated by fitting these data with a recently introduced model of partial derivative n/partial derivative T. (C) 1999 American Institute of Physics. [S0003-6951(99)02622-4].
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页码:3338 / 3340
页数:3
相关论文
共 19 条
[1]   TEMPERATURE-DEPENDENCE OF THE REFRACTIVE-INDEX IN SEMICONDUCTORS [J].
BERTOLOTTI, M ;
BOGDANOV, V ;
FERRARI, A ;
JASCOW, A ;
NAZOROVA, N ;
PIKHTIN, A ;
SCHIRONE, L .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1990, 7 (06) :918-922
[2]  
COCORULLO G, 1994, OPT LETT, V19, P420
[3]   THERMOOPTIC MODULATION AT 1.5 MU-M IN SILICON ETALON [J].
COCORULLO, G ;
RENDINA, I .
ELECTRONICS LETTERS, 1992, 28 (01) :83-85
[4]  
FISHER U, 1996, IEEE PHOTONIC TECH L, V8, P647
[5]   TEMPERATURE DISPERSION OF REFRACTIVE-INDEXES IN CRYSTALLINE AND AMORPHOUS-SILICON [J].
GHOSH, G .
APPLIED PHYSICS LETTERS, 1995, 66 (26) :3570-3572
[6]   Thermal dependence of the refractive index of InP measured with integrated optical demultiplexer [J].
Gini, E ;
Melchoir, H .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) :4335-4337
[7]   THE TEMPERATURE-DEPENDENCE OF THE REFRACTIVE-INDEX OF SILICON AT ELEVATED-TEMPERATURES AT SEVERAL LASER WAVELENGTHS [J].
JELLISON, GE ;
BURKE, HH .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :841-843
[9]   1.3 MU-M ELECTROOPTIC SILICON SWITCH [J].
LORENZO, JP ;
SOREF, RA .
APPLIED PHYSICS LETTERS, 1987, 51 (01) :6-8
[10]   ACCURATE REFRACTIVE-INDEX MEASUREMENTS OF DOPED AND UNDOPED INP BY A GRATING COUPLING TECHNIQUE [J].
MARTIN, P ;
SKOURI, EM ;
CHUSSEAU, L ;
ALIBERT, C ;
BISSESSUR, H .
APPLIED PHYSICS LETTERS, 1995, 67 (07) :881-883