Transferred InP-based HBVs on glass substrate

被引：5

作者：

Arscott, S ^{[1
]}

Mounaix, P ^{[1
]}

Lippens, D ^{[1
]}

机构：

[1] Univ Sci & Tech Lille Flandres Artois, Inst Elect & Microelect Nord, IEMN, F-59652 Villeneuve Dascq, France

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 17期

关键词：

D O I：

10.1049/el:19990984

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transferred-substrate InP-based heterostructure barrier varactor devices are reported which have been fabricated on glass substrate following a novel epitaxial layer transfer technique utilising the negative photoresist SU-8. The transferred devices exhibit a leakage current of 4.5A/cm(2) at 10V, a zero-bias capacitance of 1fF/mu m(2) and a capacitance ratio of 5:1.

引用

页码：1493 / 1494

页数：2

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