Optical breakdown processing: Influence of the ambient gas on the properties of the nanostructured Si-based layers formed

被引:13
作者
Yang, DQ
Kabashin, AV
Pilon-Marien, VG
Sacher, E
Meunier, M
机构
[1] Ecole Polytech, Couches Minces Grp, Montreal, PQ H3C 3A7, Canada
[2] Ecole Polytech, Dept Genie Phys, Montreal, PQ H3C 3A7, Canada
关键词
D O I
10.1063/1.1702102
中图分类号
O59 [应用物理学];
学科分类号
摘要
Porous nanostructured layers, exhibiting 2-2.2 eV photoluminescent (PL) emission, have been formed on silicon surfaces by the production of optical breakdown in different gases (air, Ar-2, He,N-2, O-2), maintained at atmospheric pressure. We found a significant influence of the ambient gas characteristics on the morphological and chemical properties of the layers produced, as well as on the PL efficiency. Gases with relatively low ionization potentials (air, N-2,O-2) were found to better support the optical discharge and to provide the strongest plasma-related heating of the substrate material. This led to considerable microstructural and composition modifications, which gave rise to the maximization of PL emissions. In particular, for O-2, with the lowest ionization potential, we observed local plasma-provoked melting of the target surface and the disappearance of the porous structure of the layer. We also found a clear correlation between the PL properties of the layers, subsequent to fabrication, as well as after prolonged aging, and the presence of different oxygen-containing compounds. The structures produced are of importance for optoelectronics and biosensing applications. (C) 2004 American Institute of Physics.
引用
收藏
页码:5722 / 5728
页数:7
相关论文
共 44 条
[1]   VISIBLE-LIGHT EMISSION FROM THIN-FILMS CONTAINING SI, O, N, AND H [J].
AUGUSTINE, BH ;
IRENE, EA ;
HE, YJ ;
PRICE, KJ ;
MCNEIL, LE ;
CHRISTENSEN, KN ;
MAHER, DM .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) :4020-4030
[2]   SEMICONDUCTOR SURFACE DAMAGE PRODUCED BY RUBY LASERS [J].
BIRNBAUM, M .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (11) :3688-&
[3]   THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].
BRANDT, MS ;
FUCHS, HD ;
STUTZMANN, M ;
WEBER, J ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1992, 81 (04) :307-312
[4]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[5]   PHOTOLUMINESCENCE OF OXIDIZED SILICON NANOCLUSTERS DEPOSITED ON THE BASAL-PLANE OF GRAPHITE [J].
DINH, LN ;
CHASE, LL ;
BALOOCH, M ;
TERMINELLO, LJ ;
WOOTEN, F .
APPLIED PHYSICS LETTERS, 1994, 65 (24) :3111-3113
[6]   Visible luminescence from nanocrystalline silicon films produced by plasma enhanced chemical vapor deposition [J].
Edelberg, E ;
Bergh, S ;
Naone, R ;
Hall, M ;
Aydil, ES .
APPLIED PHYSICS LETTERS, 1996, 68 (10) :1415-1417
[7]   Photoluminescence and resonant Raman spectra of silicon films produced by size-selected cluster beam deposition [J].
Ehbrecht, M ;
Kohn, B ;
Huisken, F ;
Laguna, MA ;
Paillard, V .
PHYSICAL REVIEW B, 1997, 56 (11) :6958-6964
[8]  
HUHEEY JE, 1978, INORGANIC CHEM PRINC, P40
[9]   NOVEL TECHNIQUE FOR PREPARING POROUS SILICON [J].
HUMMEL, RE ;
CHANG, SS .
APPLIED PHYSICS LETTERS, 1992, 61 (16) :1965-1967
[10]   ON THE ORIGIN OF PHOTOLUMINESCENCE IN SPARK-ERODED (POROUS) SILICON [J].
HUMMEL, RE ;
MORRONE, A ;
LUDWIG, M ;
CHANG, SS .
APPLIED PHYSICS LETTERS, 1993, 63 (20) :2771-2773