Optical breakdown processing: Influence of the ambient gas on the properties of the nanostructured Si-based layers formed

被引:13
作者
Yang, DQ
Kabashin, AV
Pilon-Marien, VG
Sacher, E
Meunier, M
机构
[1] Ecole Polytech, Couches Minces Grp, Montreal, PQ H3C 3A7, Canada
[2] Ecole Polytech, Dept Genie Phys, Montreal, PQ H3C 3A7, Canada
关键词
D O I
10.1063/1.1702102
中图分类号
O59 [应用物理学];
学科分类号
摘要
Porous nanostructured layers, exhibiting 2-2.2 eV photoluminescent (PL) emission, have been formed on silicon surfaces by the production of optical breakdown in different gases (air, Ar-2, He,N-2, O-2), maintained at atmospheric pressure. We found a significant influence of the ambient gas characteristics on the morphological and chemical properties of the layers produced, as well as on the PL efficiency. Gases with relatively low ionization potentials (air, N-2,O-2) were found to better support the optical discharge and to provide the strongest plasma-related heating of the substrate material. This led to considerable microstructural and composition modifications, which gave rise to the maximization of PL emissions. In particular, for O-2, with the lowest ionization potential, we observed local plasma-provoked melting of the target surface and the disappearance of the porous structure of the layer. We also found a clear correlation between the PL properties of the layers, subsequent to fabrication, as well as after prolonged aging, and the presence of different oxygen-containing compounds. The structures produced are of importance for optoelectronics and biosensing applications. (C) 2004 American Institute of Physics.
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收藏
页码:5722 / 5728
页数:7
相关论文
共 44 条
[11]   Laser-induced treatment of silicon in air and formation of Si/SiOx photoluminescent nanostructured layers [J].
Kabashin, AV ;
Meunier, M .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 101 (1-3) :60-64
[12]   Visible photoluminescence from nanostructured Si-based layers produced by air optical breakdown on silicon [J].
Kabashin, AV ;
Meunier, M .
APPLIED PHYSICS LETTERS, 2003, 82 (10) :1619-1621
[13]   Fabrication of photoluminescent Si-based layers by air optical breakdown near the silicon surface [J].
Kabashin, AV ;
Meunier, M .
APPLIED SURFACE SCIENCE, 2002, 186 (1-4) :578-582
[14]   Photoluminescence characterization of Si-based nanostructured films produced by pulsed laser ablation [J].
Kabashin, AV ;
Meunier, M ;
Leonelli, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06) :2217-2222
[15]   Correlation between photoluminescence properties and morphology of laser-ablated Si/SiOx nanostructured films [J].
Kabashin, AV ;
Sylvestre, JP ;
Patskovsky, S ;
Meunier, M .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (05) :3248-3254
[16]   Effects of deposition and post-fabrication conditions on photoluminescent properties of nanostructured Si/SiOx films prepared by laser ablation [J].
Kabashin, AV ;
Charbonneau-Lefort, M ;
Meunier, M ;
Leonelli, R .
APPLIED SURFACE SCIENCE, 2000, 168 (1-4) :328-331
[17]   VISIBLE PHOTOLUMINESCENCE FROM OXIDIZED SI NANOMETER-SIZED SPHERES - EXCITON CONFINEMENT ON A SPHERICAL-SHELL [J].
KANEMITSU, Y ;
OGAWA, T ;
SHIRAISHI, K ;
TAKEDA, K .
PHYSICAL REVIEW B, 1993, 48 (07) :4883-4886
[18]  
KANEMITSU Y, 1993, MATER RES SOC SYMP P, V298, P205, DOI 10.1557/PROC-298-205
[19]   A porous silicon-based optical interferometric biosensor [J].
Lin, VSY ;
Motesharei, K ;
Dancil, KPS ;
Sailor, MJ ;
Ghadiri, MR .
SCIENCE, 1997, 278 (5339) :840-843
[20]   Light emission from nanometer-sized silicon particles fabricated by the laser ablation method [J].
Makimura, T ;
Kunii, Y ;
Murakami, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (9A) :4780-4784