Visible photoluminescence from nanostructured Si-based layers produced by air optical breakdown on silicon

被引:50
作者
Kabashin, AV [1 ]
Meunier, M [1 ]
机构
[1] Ecole Polytech, Dept Engn Phys, Laser Proc Lab, Montreal, PQ H3C 3A7, Canada
关键词
D O I
10.1063/1.1557752
中图分类号
O59 [应用物理学];
学科分类号
摘要
Pulsed radiation of CO2 laser has been used to produce an optical breakdown on a silicon target in atmospheric air. After several breakdown initiations near the threshold of plasma production, a highly porous layer was formed under the radiation spot on the silicon surface. The fabricated layers presented the porosity of 75%-80% and were formed of silicon nanocrystals imbedded in SiO2 matrix. They exhibited strong photoluminescence (PL) around 2.0 eV, which was stable to a prolonged continuous illumination of samples. Possible mechanisms of nanostructure formation and PL origin are discussed. (C) 2003 American Institute of Physics.
引用
收藏
页码:1619 / 1621
页数:3
相关论文
共 25 条
[1]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[2]  
Cullity BD, 1978, ELEMENTS XRAY DIFFRA
[3]   PARAMETRIC STUDY OF CURRENT INDUCED IN A CO-2 LASER PLASMA [J].
DROUET, MG ;
PEPIN, H .
APPLIED PHYSICS LETTERS, 1976, 28 (08) :426-428
[4]   Visible luminescence from nanocrystalline silicon films produced by plasma enhanced chemical vapor deposition [J].
Edelberg, E ;
Bergh, S ;
Naone, R ;
Hall, M ;
Aydil, ES .
APPLIED PHYSICS LETTERS, 1996, 68 (10) :1415-1417
[5]   FORMATION OF LUMINESCENT SILICON BY LASER ANNEALING OF A-SIH [J].
ELKADER, KMA ;
OSWALD, J ;
KOCKA, J ;
CHAB, V .
APPLIED PHYSICS LETTERS, 1994, 64 (19) :2555-2556
[6]  
GRISCOM DL, 1991, J CERAM SOC JPN, V99, P923, DOI DOI 10.2109/JCERSJ.99.923
[7]   Microstructuring of silicon with femtosecond laser pulses [J].
Her, TH ;
Finlay, RJ ;
Wu, C ;
Deliwala, S ;
Mazur, E .
APPLIED PHYSICS LETTERS, 1998, 73 (12) :1673-1675
[8]   NOVEL TECHNIQUE FOR PREPARING POROUS SILICON [J].
HUMMEL, RE ;
CHANG, SS .
APPLIED PHYSICS LETTERS, 1992, 61 (16) :1965-1967
[9]   ON THE ORIGIN OF PHOTOLUMINESCENCE IN SPARK-ERODED (POROUS) SILICON [J].
HUMMEL, RE ;
MORRONE, A ;
LUDWIG, M ;
CHANG, SS .
APPLIED PHYSICS LETTERS, 1993, 63 (20) :2771-2773
[10]   Experimental study of spontaneous electric field generated by a laser plasma [J].
Kabashin, AV ;
Nikitin, PI ;
Marine, W ;
Sentis, M .
APPLIED PHYSICS LETTERS, 1998, 73 (01) :25-27