GaN thin film growth on LiGaO2 substrate with a multi-domain structure

被引：29

作者：

Tazoh, Y ^{[1
]}

Ishii, T ^{[1
]}

Miyazawa, S ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, SYST ELECT LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 6B期

关键词：

LiGaO2; substrate; GaN; epitaxial growth; lattice matching;

D O I：

10.1143/JJAP.36.L746

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the differences in the growth morphologies of hexagonal GaN thin films on {001}LiGaO2 substrates with a multi-domain structure. GaN thin alms grown on one domain, where the etching rate was high using an aqueous solution of nitric acid (H2O:HNO3=1:1), peeled off. On the other hand, GaN thin films with good crystallinity. grew epitaxially on the other domain, where the etching rate was low. These results strongly suggest that the peeling-off of GaN film from a {001}LiGaO2 substrate must be closely related to the differences in the chemical stability and/or polarity of the two domains.

引用

页码：L746 / L749

页数：4

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