High sensitivity 2.5 mu m photodiodes with metastable GaInAsSb absorbing layer

被引：4

作者：

Mebarki, M ^{[1
]}

AitKaci, H ^{[1
]}

Lazzari, JL ^{[1
]}

SeguraFouillant, C ^{[1
]}

Joullie, A ^{[1
]}

Llinares, C ^{[1
]}

Salesse, I ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2, CTR ELECTR MONTPELLIER, CNRS, URA 391, F-34095 MONTPELLIER 5, FRANCE

来源：

SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 01期

关键词：

D O I：

10.1016/0038-1101(95)00104-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al-0.35 Ga-0.65 As-0.03 Sb-0.97 (p(+))/Ga-0.74 In-0.26 As-0.23 Sb-0.77 (p)/GaSb (n(+)) photodiodes with a long-wavelength cutoff of 2.5 mu m have been fabricated on GaSb (111)B substrates. The active GaInAsSb layer was grown by liquid phase epitaxy inside the metastable region of the alloy. These devices without any passivation or antireflection coating exhibit a reverse current of 35 mA/cm(2) (at -1 V) and an external quantum efficiency higher than 40% in the wavelength range 1.3-2.3 mu m with a peak value of 52% at 2.1 mu m.

引用

页码：39 / 41

页数：3

共 10 条

[1]

Andreev I. A., 1988, Soviet Technical Physics Letters, V14, P435

[2]

Andreev I. A., 1989, Soviet Technical Physics Letters, V15, P253

[3]

ANDREEV IA, 1986, PISMA ZH TEKH FIZ+, V12, P1311

[4] HIGH-SPEED GAINASSB/GASB PIN PHOTODETECTORS FOR WAVELENGTHS TO 2.3 MU-M [J].

BOWERS, JE ;

SRIVASTAVA, AK ;

BURRUS, CA ;

DEWINTER, JC ;

POLLACK, MA ;

ZYSKIND, JL .

ELECTRONICS LETTERS, 1986, 22 (03) :137-138

[5] THEORETICAL CALCULATIONS OF ELECTRON-MOBILITY IN TERNARY 3-5 COMPOUNDS [J].

HARRISON, JW ;

HAUSER, JR .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) :292-300

[6] GROWTH LIMITATIONS BY THE MISCIBILITY GAP IN LIQUID-PHASE EPITAXY OF GA1-XINXASYSB1-Y ON GASB [J].

LAZZARI, JL ;

TOURNIE, E ;

PITARD, F ;

JOULLIE, A ;

LAMBERT, B .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (1-3) :125-128

[7] MOVPE GROWN GA0.6IN0.4SB PHOTODIODES FOR 2.55-MU-M DETECTION [J].

PASCALDELANNOY, F ;

BOUGNOT, J ;

ALLOGHO, GG ;

GIANI, A ;

GOUSKOV, L ;

BOUGNOT, G .

ELECTRONICS LETTERS, 1992, 28 (06) :531-532

[8] HIGH-PERFORMANCE GALNASSB/GASB P-N PHOTODIODES FOR THE 1.8-2.3 MU-WAVELENGTH RANGE [J].

SRIVASTAVA, AK ;

DEWINTER, JC ;

CANEAU, C ;

POLLACK, MA ;

ZYSKIND, JL .

APPLIED PHYSICS LETTERS, 1986, 48 (14) :903-904

[9] GAINASSB/GASB PN PHOTODIODES FOR DETECTION TO 2.4-MU-M [J].

TOURNIE, E ;

LAZZARI, JL ;

VILLEMAIN, E ;

JOULLIE, A ;

GOUSKOV, L ;

KARIM, M ;

SALESSE, I .

ELECTRONICS LETTERS, 1991, 27 (14) :1237-1239

[10] 2.5 MU-M GAINASSB LATTICE-MATCHED TO GASB BY LIQUID-PHASE EPITAXY [J].

TOURNIE, E ;

LAZZARI, JL ;

PITARD, F ;

ALIBERT, C ;

JOULLIE, A ;

LAMBERT, B .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) :5936-5938

← 1 →