GAINASSB/GASB PN PHOTODIODES FOR DETECTION TO 2.4-MU-M

被引：25

作者：

TOURNIE, E ^{[1
]}

LAZZARI, JL ^{[1
]}

VILLEMAIN, E ^{[1
]}

JOULLIE, A ^{[1
]}

GOUSKOV, L ^{[1
]}

KARIM, M ^{[1
]}

SALESSE, I ^{[1
]}

机构：

[1] UNIV MONTPELLIER SCI & TECH LANGUEDOC 2, CTR ELECTR MONTPELLIER, CNRS, URA 391, F-34095 MONTPELLIER 5, FRANCE

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 14期

关键词：

PHOTODIODES; DIODES; SEMICONDUCTOR DEVICES AND MATERIALS; MU-M;

D O I：

10.1049/el:19910776

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ga0.77In0.23As0.20Sb0.80/GaSb pn heterojunction photodiodes have been prepared by liquid phase epitaxy. They exhibit a long-wavelength threshold of 2.4-mu-m. The room-temperature dark current at V = -0.5 V is 3-mu-A (10 mA/cm2) and the external quantum efficiency is around 40% in the wavelength range 1.75-2.25-mu-m. The estimated detectivity D* at 2.2-mu-m is 8.8 x 10(9) cm Hz1/2 W-1.

引用

页码：1237 / 1239

页数：3

共 13 条

[1]

Andreev I. A., 1987, Soviet Technical Physics Letters, V13, P199

[2]

Andreev I. A., 1988, Soviet Technical Physics Letters, V14, P435

[3]

Andreev I. A., 1989, Soviet Technical Physics Letters, V15, P253

[4]

ANDREEV IA, 1986, PISMA ZH TEKH FIZ+, V12, P1311