REVERSE CURRENT AND EXTERNAL QUANTUM EFFICIENCY OF ZINC DIFFUSED 1.3-MU-M GAALASSB PHOTODIODES

被引：3

作者：

MEBARKI, M

BELATOUI, T

JOULLIE, A

ORSAL, B

ALABEDRA, R

机构：

[1] UNIV MONTPELLIER SCI & TECHN LANGUEDOC 2,EQUIPE MICROOPTOELECTR MONTPELLIER EM2,CNRS,URA 392,F-34095 MONTPELLIER 5,FRANCE

[2] UNIV MONTPELLIER SCI & TECH LANGUEDOC 2,CTR ELECTR MONTPELLIER,CNRS,URA 391,F-34095 MONTPELLIER 5,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 08期

关键词：

D O I：

10.1063/1.346250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zinc-diffused p+n photodiodes were prepared from 1.3-μm GaAlAsSb solid solution grown on GaSb (111) substrate by liquid-phase epitaxy. The reverse dark current was measured in the 77-300 K temperature domain. It has been found dominated by a defect tunneling component in a wide voltage range. The study of spectral photoresponse shows external quantum efficiency (without AR coating) as high as 57% at 1.3 μm.

引用

页码：4106 / 4110

页数：5

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