Porous silicon resonant cavity light emitting diodes

被引：58

作者：

Pavesi, L ^{[1
]}

Guardini, R ^{[1
]}

Mazzoleni, C ^{[1
]}

机构：

[1] UNIV TRENT, DIPARTIMENTO FIS, I-38050 TRENT, ITALY

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 97卷 / 12期

关键词：

semiconductors; optical properties; electroluminescence;

D O I：

10.1016/0038-1098(95)00798-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Room temperature visible light emitting diodes based on porous silicon planar microcavities are reported. The electrical injection was provided by metal contacts (Schottky-like diode). The performance of these structures with respect to standard porous silicon LEDs is presented and discussed.

引用

页码：1051 / 1053

页数：3

共 15 条

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