Adsorption and decomposition of C-60 molecules on Si(111) surfaces

被引:10
作者
Chen, D
Workman, RK
Sarid, D
机构
[1] Optical Sciences Center, University of Arizona, Tucson
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 02期
关键词
D O I
10.1116/1.589188
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Adsorption of C-60 molecules on Si(lll)-(7x7) has been studied using scanning tunneling microscopy under ultrahigh vacuum conditions at a variety of temperatures and coverages. At submonolayer coverages, isolated C-60 molecules were found to adsorb preferentially in the areas near the three midadatoms within a half unit cell of (7x7) symmetry. At monolayer coverage, the adsorbate-adsorbate interaction changes the molecular bonding sites and causes the local ordering of the C-60 adlayer. Thermal annealing to temperatures above 800 degrees C causes the decomposition of C-60 molecules on the Si surface and the formation of SIC clusters. (C) 1996 American Vacuum Society.
引用
收藏
页码:979 / 981
页数:3
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