Surface analysis by highly charged ion based secondary ion mass spectrometry

被引：17

作者：

Schenkel, T ^{[1
]}

Hamza, AV

Barnes, AV

Newman, MW

Machicoane, G

Niedermayer, T

Hattass, M

McDonald, JW

Schneider, DH

Wu, KJ

Odom, RW

机构：

[1] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

[2] Charles Evans & Associates, Redwood City, CA 94063 USA

来源：

PHYSICA SCRIPTA | 1999年 / T80A卷

关键词：

D O I：

10.1238/Physica.Topical.080a00073

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electronic sputtering in the interaction of slow (v < 10(6) m/s), highly charged ions (e.g., AU(69+)) With Solid surfaces increases secondary ion yields by over two orders of magnitude compared to sputtering with singly charged ions. We discuss advantages of highly charged ions for analysis of semiconductors and biomolecular solids in a time-of-flight secondary ion mass spectrometry scheme.

引用

页码：73 / 75

页数：3

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