Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces

被引：5

作者：

Samsonenko, Yu. B. ^{[1
,2
,3
]}

Cirlin, G. E. ^{[1
,2
,3
]}

Egorov, V. A. ^{[1
,3
]}

Polyakov, N. K. ^{[1
,2
,3
]}

Ulin, V. P. ^{[2
]}

Dubrovskii, V. G. ^{[2
,3
]}

机构：

[1] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 198103, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Russian Acad Sci, St Petersburg Ctr Res & Educ Phys & Technol, St Petersburg 195220, Russia

来源：

SEMICONDUCTORS | 2008年 / 42卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S1063782608120130

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of experimental studies on the growth and the morphological and structural properties of GaAs nanowire crystals on different silicon surfaces are reported. It is shown that the nonplanar geometrical layout of growth allows the production of epitaxial nanowire crystals in a system with a large lattice mismatch. The growth on porous substrates, the role of the surface orientation, high-temperature annealing, and presence of an oxide layer at the surface, and some other effects typical of growth of III-V nanowire crystals on the Si surface are studied and analyzed. Intense emission from the array of GaAs nanowire crystals grown on the Si (111) surface is observed.

引用

页码：1445 / 1449

页数：5

共 13 条

[1]

BAKKERS E, 2006, ECS T, V3, P415

[2] Critical diameter for III-V nanowires grown on lattice-mismatched substrates [J].

Chuang, Linus C. ;

Moewe, Michael ;

Chase, Chris ;

Kobayashi, Nobuhiko P. ;

Chang-Hasnain, Connie ;

Crankshaw, Shanna .

APPLIED PHYSICS LETTERS, 2007, 90 (04)

[3] Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb [J].

Cirlin, GE ;

Dubrovskii, VG ;

Tonkikh, AA ;

Sibirev, NV ;

Ustinov, VM ;

Werner, P .

SEMICONDUCTORS, 2005, 39 (05) :547-551

[4] Diffusion-controlled growth of semiconductor nanowires: Vapor pressure versus high vacuum deposition [J].

Dubrovskii, V. G. ;

Sibirev, N. V. ;

Suris, R. A. ;

Cirlin, G. E. ;

Harmand, J. C. ;

Ustinov, V. M. .

SURFACE SCIENCE, 2007, 601 (18) :4395-4401

[5] Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment [J].

Dubrovskii, VG ;

Cirlin, GE ;

Soshnikov, IP ;

Tonkikh, AA ;

Sibirev, NV ;

Samsonenko, YB ;

Ustinov, VM .

PHYSICAL REVIEW B, 2005, 71 (20)

[6]

Givargizov E. I., 1977, GROWTH WHISKERS LAME

[7] Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires [J].

Glas, Frank .

PHYSICAL REVIEW B, 2006, 74 (12)

[8] GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperature [J].

Harmand, J. C. ;

Tchernycheva, M. ;

Patriarche, G. ;

Travers, L. ;

Glas, F. ;

Cirlin, G. .

JOURNAL OF CRYSTAL GROWTH, 2007, 301 :853-856

[9] Heteroepitaxial growth dynamics of InP nanowires on silicon [J].

Sarkar, Ataur ;

Kimukin, Ibrahim ;

Edgar, Christopher W. ;

Yi, Sungsoo ;

Islama, M. Saif .

JOURNAL OF NANOPHOTONICS, 2008, 2

[10] Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy [J].

Soshnikov, I. P. ;

Cirlin, G. E. ;

Tonkikh, A. A. ;

Nevedomskii, V. N. ;

Samsonenko, Yu. B. ;

Ustinov, V. M. .

PHYSICS OF THE SOLID STATE, 2007, 49 (08) :1440-1445

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