Ex situ growth of the c-axis preferred oriented SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates

被引:9
作者
Bae, C [1 ]
Lee, JK [1 ]
Lee, SH [1 ]
Jung, HJ [1 ]
机构
[1] KIST, Thin Film Technol Res Ctr, Seoul 136791, South Korea
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1999年 / 17卷 / 05期
关键词
D O I
10.1116/1.581967
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
SrBi2Ta2O9 (SBT) thin films were deposited on (111) oriented Pt bottom electrodes using the rf magnetron sputtering method and then postannealed at 650-800 degrees C for 30 min in different oxygen atmospheres. The effect of Bi content on the c-axis preferred oriented growth was confirmed by the control of the Bi2O3 loss during the postannealing. With increasing Bi content in SBT thin films, the degree of the c-axis preferred orientation was enhanced. In addition, a bimodal grain size distribution due to the Sr deficiency in the SBT film was observed. It is suggested that the c-axis preferred oriented growth on Pt(111) bottom electrodes can be attributed to growth controlled by surface energy minimization. (C) 1999 American Vacuum Society. [S0734-2101(99)03705-7].
引用
收藏
页码:2957 / 2961
页数:5
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