Effect of oxygen stoichiometry on the electrical properties of zirconia gate dielectrics

被引：53

作者：

Ramanathan, S ^{[1
]}

Muller, DA

Wilk, GD

Park, CM

McIntyre, PC

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[3] Agere Syst, Elect Device Res Lab, Murray Hill, NJ 07974 USA

[4] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 20期

关键词：

D O I：

10.1063/1.1418266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report on electrical and microstructural properties of ultrathin zirconia dielectrics grown on SiO2 by ultraviolet (UV) ozone oxidation and natural oxidation (no UV light). Capacitance-voltage (C-V) measurements were performed at multiple frequencies on capacitors fabricated from a ZrO2-SiO2 stack. It was found that the C-V curves from samples grown by natural oxidation were distorted and showed severe frequency dependence while samples grown with UV light exposure under otherwise identical conditions had superior electrical behavior. Loss tangent measurements and detailed electron energy loss spectroscopy studies performed on the two samples revealed that the sample grown by natural oxidation was highly oxygen deficient, and this led to its poor electrical properties. (C) 2001 American Institute of Physics.

引用

页码：3311 / 3313

页数：3

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