Carrier mobilities in irradiated silicon

被引：8

作者：

Brodbeck, TJ

Chilingarov, A ^{[1
]}

Sloan, T

Fretwurst, E

Kuhnke, M

Lindstroem, G

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] Univ Hamburg, D-20246 Hamburg, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2002年 / 477卷 / 1-3期

关键词：

irradiated silicon; carrier mobility; space charge distribution;

D O I：

10.1016/S0168-9002(01)01858-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Using laser pulses with < 1 ns duration and a 500 MHz digital oscilloscope the current pulses were investigated for p-i-n Si diodes irradiated by neutrons up to 1 MeV equivalent fluences of 2.4 x 10(14) n/cm(2). Fitting the current pulse duration as a function of bias voltage allowed measurement of mobility and saturation velocity for both electrons and holes. No significant changes in these parameters were observed up to the maximum fluence. There are indications of a non-uniform space charge distribution in heavily irradiated diodes. (C) 2002 Elsevier Science B.V. All rights reserved.

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收藏

页码：287 / 292

页数：6

相关论文

共 12 条

[1]

BEATTIE LJ, 1998, RALTH1998015

[2] NEUTRON YIELDS FROM THICK BE TARGETS BOMBARDED WITH DEUTERONS OR PROTONS [J].

BREDE, HJ ;

DIETZE, G ;

KUDO, K ;

SCHREWE, UJ ;

TANCU, F ;

WEN, C .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1989, 274 (1-2) :332-344

[3] DRIFT VELOCITY OF ELECTRONS AND HOLES AND ASSOCIATED ANISOTROPIC EFFECTS IN SILICON [J].

CANALI, C ;

OTTAVIANI, G ;

ALBERIGI.A .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) :1707-+

[4]

*CERN LHCC, 1998, 9839 CERNLHCC

[5] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[6] DETERMINATION OF THE FERMI-LEVEL POSITION FOR NEUTRON-IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS AND MATERIALS USING THE TRANSIENT CHARGE TECHNIQUE (TCHT) [J].

EREMIN, V ;

LI, Z .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) :1907-1912

[7] CARRIER DRIFT MOBILITY STUDY IN NEUTRON-IRRADIATED HIGH-PURITY SILICON [J].

EREMIN, V ;

LI, Z .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1995, 362 (2-3) :338-343

[8] OPTICAL-CONSTANTS OF EPITAXIAL SILICON IN REGION 1-3.3 EV [J].

HULTHEN, R .

PHYSICA SCRIPTA, 1975, 12 (06) :342-344

[9] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON [J].

JACOBONI, C ;

CANALI, C ;

OTTAVIANI, G ;

QUARANTA, AA .

SOLID-STATE ELECTRONICS, 1977, 20 (02) :77-89

[10] Study of charge transport in non-irradiated and irradiated silicon detectors [J].

Leroy, C ;

Roy, P ;

Casse, C ;

Glaser, M ;

Grigoriev, E ;

Lemeilleur, F .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 426 (01) :99-108