UV ozone treatment for improving contact resistance on graphene

被引：42

作者：

Chen, Chung Wei ^{[1
,4
]}

Ren, Fan ^{[1
]}

Chi, Gou-Chung ^{[2
]}

Hung, Sheng-Chun ^{[3
]}

Huang, Y. P. ^{[4
]}

Kim, Jihyun ^{[5
]}

Kravchenko, Ivan I. ^{[6
]}

Pearton, Stephen J. ^{[7
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[3] Natl Cent Univ, Opt Sci Ctr, Jhongli 320, Taiwan

[4] Natl Cent Univ, Dept Phys, Jhongli 320, Taiwan

[5] Korea Univ, Dept Chem & Biol Engn, Seoul 136701, South Korea

[6] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37830 USA

[7] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2012年 / 30卷 / 06期

关键词：

SINGLE-LAYER GRAPHENE; OXIDE;

D O I：

10.1116/1.4754566

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];

摘要：

Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 x 10(-6) Omega-cm(2)) compared to untreated surfaces (4 x 10(-3) Omega-cm(2)). Subsequent annealing at 300 degrees C lowers the minimum value achieved to 7 x 10(-7) Omega-cm(2). Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4754566]

引用

页数：3

共 25 条

[1]

Raman spectroscopy study on the reactions of UV-generated oxygen atoms with single-layer graphene on SiO2/Si substrates [J].

Ahn, Gwanghyun ;

Kim, Hye Ri ;

Hong, Byung Hee ;

Ryu, Sunmin .

CARBON LETTERS, 2012, 13 (01) :34-38

[2]

Raman fingerprint of charged impurities in graphene [J].

Casiraghi, C. ;

Pisana, S. ;

Novoselov, K. S. ;

Geim, A. K. ;

Ferrari, A. C. .

APPLIED PHYSICS LETTERS, 2007, 91 (23)

[3]

Effect of ozone cleaning and annealing on Ti/Al/Pt/Au ohmic contacts on GaN nanowires [J].

Chang, CY ;

Lan, TW ;

Chi, GC ;

Chen, LC ;

Chen, KH ;

Chen, JJ ;

Jang, SW ;

Ren, F ;

Pearton, SJ .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (05) :G155-G157

[4]

Oxygen sensors made by monolayer graphene under room temperature [J].

Chen, C. W. ;

Hung, S. C. ;

Yang, M. D. ;

Yeh, C. W. ;

Wu, C. H. ;

Chi, G. C. ;

Ren, F. ;

Pearton, S. J. .

APPLIED PHYSICS LETTERS, 2011, 99 (24)

[5]

Plasma treatments to improve metal contacts in graphene field effect transistor [J].

Choi, Min Sup ;

Lee, Seung Hwan ;

Yoo, Won Jong .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (07)

[6]

Graphene Oxide, Highly Reduced Graphene Oxide, and Graphene: Versatile Building Blocks for Carbon-Based Materials [J].

Compton, Owen C. ;

Nguyen, SonBinh T. .

SMALL, 2010, 6 (06) :711-723

[7]

Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[8]

Doping graphene with metal contacts [J].

Giovannetti, G. ;

Khomyakov, P. A. ;

Brocks, G. ;

Karpan, V. M. ;

van den Brink, J. ;

Kelly, P. J. .

PHYSICAL REVIEW LETTERS, 2008, 101 (02)

[9]

Atomic structure of graphene on SiO2 [J].

Ishigami, Masa ;

Chen, J. H. ;

Cullen, W. G. ;

Fuhrer, M. S. ;

Williams, E. D. .

NANO LETTERS, 2007, 7 (06) :1643-1648

[10]

Graphene transistors fabricated via transfer-printing in device active-areas on large wafer [J].

Liang, Xiaogan ;

Fu, Zengli ;

Chou, Stephen Y. .

NANO LETTERS, 2007, 7 (12) :3840-3844

← 1 2 3 →