Epitaxial growth of cubic SiC films on Si substrates by high vacuum chemical vapor deposition using 1,3-disilabutane

被引：18

作者：

Lee, KW ^{[1
]}

Yu, KS ^{[1
]}

Boo, JH ^{[1
]}

Kim, Y ^{[1
]}

Hatayama, T ^{[1
]}

Kimoto, T ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] KYOTO UNIV,DEPT ELECT SCI & ENGN,SAKYO KU,KYOTO 60601,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 04期

关键词：

D O I：

10.1149/1.1837614

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Heteroepitaxial cubic SiC films were grown on (001) Si substrates at 900 to 980 degrees C using 1,3-disilabutane (H3SiCH2SiH2CH3) as a single molecular precursor under high vacuum conditions (5.0 to 8.0 x 10(-6) Torr). A carbonized buffer layer, grown in situ by gas source molecular beam epitaxy (GSMBE) of propane (C3H8) was employed to minimize the effect of lattice mismatch between the Si substrate and the SiC overlayer. The crystalline structure, chemical composition, and thickness of the deposited films were investigated by in situ reflection high-energy diffraction, x-ray diffraction, Rutherford back scattering, Auger electron spectroscopy and transmission electron microscopy. The results show that high quality epitaxial 3C-SiC films with correct stoichiometry can be deposited on Si in this temperature range. The single precursor 1,3-disilabutane has been found suitable for the epitaxial growth of cubic SiC on (001) Si substrates.

引用

页码：1474 / 1476

页数：3

共 17 条

[1] GROWTH OF CUBIC SIC FILMS USING 1,3-DISILABUTANE [J].

BOO, JH ;

YU, KS ;

KIM, Y ;

YEON, SH ;

JUNG, IN .

CHEMISTRY OF MATERIALS, 1995, 7 (04) :694-698

[2]

DAVIS RE, 1985, IEDM, P785

[3] THIN-FILM DEPOSITION AND MICROELECTRONIC AND OPTOELECTRONIC DEVICE FABRICATION AND CHARACTERIZATION IN MONOCRYSTALLINE ALPHA AND BETA SILICON-CARBIDE [J].

DAVIS, RF ;

KELNER, G ;

SHUR, M ;

PALMOUR, JW ;

EDMOND, JA .

PROCEEDINGS OF THE IEEE, 1991, 79 (05) :677-701

[4] ALGORITHMS FOR THE RAPID SIMULATION OF RUTHERFORD BACKSCATTERING SPECTRA [J].

DOOLITTLE, LR .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) :344-351

[5] EPITAXIAL-GROWTH OF 3C-SIC ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

FUJIWARA, Y ;

SAKUMA, E ;

MISAWA, S ;

ENDO, K ;

YOSHIDA, S .

APPLIED PHYSICS LETTERS, 1986, 49 (07) :388-390

[6] SINGLE-CRYSTALLINE, EPITAXIAL CUBIC SIC FILMS GROWN ON (100) SI AT 750-DEGREES-C BY CHEMICAL VAPOR-DEPOSITION [J].

GOLECKI, I ;

REIDINGER, F ;

MARTI, J .

APPLIED PHYSICS LETTERS, 1992, 60 (14) :1703-1705

[7] CONTROLLED CARBONIZATION OF SI(001) SURFACE USING HYDROCARBON RADICALS IN ULTRAHIGH-VACUUM [J].

HATAYAMA, T ;

TARUI, Y ;

YOSHINOBU, T ;

FUYUKI, T ;

MATSUNAMI, H .

JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) :333-337

[8] EPITAXIAL-GROWTH AND ELECTRICAL CHARACTERISTICS OF BETA-SIC ON SI BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION [J].

HWANG, JD ;

FANG, YK ;

SONG, YJ ;

YAUNG, DN .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (03) :1447-1450

[9] EPITAXIAL AL2O3 FILMS ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

ISHIDA, M ;

KATAKABE, I ;

NAKAMURA, T ;

OHTAKE, N .

APPLIED PHYSICS LETTERS, 1988, 52 (16) :1326-1328

[10] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

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