Effect of high magnetic fields on the noise temperature of a heterostructure field-effect transistor low-noise amplifier

被引：32

作者：

Daw, E

Bradley, RF

机构：

[1] MIT,NUCL SCI LAB,CAMBRIDGE,MA 02139

[2] NATL RADIO ASTRON OBSERV,CHARLOTTESVILLE,VA 22903

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 04期

关键词：

D O I：

10.1063/1.366000

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the results of measurements of the noise temperature of a heterostructure field-effect transistor (HFET) low-noise amplifier operating at 683 MHz in high static magnetic fields. These measurements indicate that the amplifier noise temperature increases from 4.2 K in zero field to 7.0 K at 3.6 T. The effect is highly dependent on the orientation of the amplifier with respect to the magnetic field. We propose an explanation of this effect in which the paths of the electrons in the HFET channel are altered due to the Lorentz force from the applied field, affecting the HFET transconductance. Calculations based on this model are shown to be consistent with our measurements. (C) 1997 American Institute of Physics.

引用

页码：1925 / 1929

页数：5

共 12 条

[1]

BRADLEY RF, 1994, URSI NAT RAD SCI M D, P20

[2] DC AND MICROWAVE CHARACTERISTICS OF SUB-0.1-MU-M GATE-LENGTH PLANAR-DOPED PSEUDOMORPHIC HEMTS [J].