High-quality InGaAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy

High-quality InxGa1-xAs layers (0.505 less than or equal to x less than or equal to 0.545) were grown on (411)A-oriented InP substrates by molecular beam epitaxy (MBE). High-resolution X-ray diffraction (HRXRD) measurements of the (411)A InxGa1-xAs layers showed no relaxation of lattice mismatch, and residual strain components observed in the (411)A InGaAs layers were in good agreement with calculated results based on the constrained pseudomorphic layer model on high index substrates proposed by Yang et al. [Appl. Phys. Lett. 65 (1994) 2789]. Photoluminescence (PL) linewidth of the (411)A InGaAs layer with In content (x) of 0.505 was 1.9 meV at 12 K, which is less than half that (4.0 meV) of an InGaAs layer simultaneously grown on a (100) InP substrate, and almost the same as the optimum value (1.2-3.0 meV) reported for InGaAs layers grown an (100) InP substrates. These results indicate that high-quality InGaAs layers can be easily obtained by MBE growth on (411)A InP substrates.