Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

被引：22

作者：

Kitada, T ^{[1
]}

Saeki, T

Ohashi, M

Shimomura, S

Adachi, A

Okamoto, Y

Sano, N

Hiyamizu, S

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Toyonaka, Osaka 560, Japan

[2] Nisshin Elect Co Ltd, Res Dev Div, Ukyo Ku, Kyoto 615, Japan

[3] Kubota LTD, Res & Headquarters, Amagasaki, Hyogo 661, Japan

[4] Kwansei Gakuin Univ, Fac Sci, Nishinomiya, Hyogo 662, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 09期

关键词：

(411)A InP substrates; InAlAs; InGaAs; molecular beam epitaxy (MBE); photoluminescence (PL); super-flat interfaces;

D O I：

10.1007/s11664-998-0161-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effectively atomically flat interfaces over a macroscopic area ("(411)A super-flat interfaces") were successfully achieved in In0.53Ga0.47As/In0.52Al0.48As quantum wells (QWs) grown on (411)A InP substrates by molecular beam epitaxy (MBE) at a substrate temperature of 570 degrees C and V/III = 6. Surface morphology of the In0.53Ga0.47As/In0.52Al0.48As QWs was smooth and featureless, while a rough surface of those simultaneously grown on a (100) InP substrate was observed. Photoluminescence (PL) linewidths at 4.2 K from the (411)A QWs with well width of 0.6-12 nm were 20-30 % narrower than those grown on a (100) InP substrate and also they are almost as narrow as each of split PL peaks for those of growth-interrupted QWs on a (100) InP substrate. In the case of the (411)A QWs, only one PL peak with very narrow linewidth was observed from each QW over a large distance (7 mm) on a wafer.

引用

页码：1043 / 1046

页数：4

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