GaAs/AlAs resonant tunneling diodes with super-flat interfaces grown on (411)A GaAs substrates by MBE

被引：8

作者：

Shinohara, K

Kasahara, K

Shimomura, S

Adachi, A

Sano, N

Hiyamizu, S

机构：

[1] NISSHIN ELECT CO LTD, UKYO KU, KYOTO 615, JAPAN

[2] KWANSEI GAKUIN UNIV, FAC SCI, NISHINOMIYA, HYOGO 662, JAPAN

[3] OSAKA UNIV, EXTREME MAT RES CTR, TOYONAKA, OSAKA 560, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

关键词：

(4 1 1)A GaAs substrates; super-flat interface; GaAs/AlAs RTD;

D O I：

10.1016/S0022-0248(96)01012-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaAs/AlAs resonant tunneling diodes (RTDs) with atomically flat GaAs/AlAs interfaces over an entire device area (super-flat interfaces) have been successfully fabricated on a (411)A GaAs substrate by molecular beam epitaxy (MBE). The (411)A GaAs/AlAs RTDs exhibited a superior peak-to-valley current ratio (J(p)/J(v) = 11.8 at 80 K) to that (7.5) of RTDs simultaneously grown on a conventional (100)GaAs substrate. The improved J(p)/J(v) ratio of the (411)A RTD is believed to be due to the super-flat GaAs/AlAs interfaces, which significantly reduce the valley current density.

引用

页码：924 / 929

页数：6

共 16 条

[1] EXTREMELY HIGH UNIFORMITY OF INTERFACES IN GAAS/ALGAAS QUANTUM-WELLS GROWN ON (411)A GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

HIYAMIZU, S ;

SHIMOMURA, S ;

WAKEJIMA, A ;

KANEKO, S ;

ADACHI, A ;

OKAMOTO, Y ;

SANO, N ;

MURASE, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :1043-1046

[2] EXCELLENT NEGATIVE DIFFERENTIAL RESISTANCE OF INALAS-INGAAS RESONANT TUNNELING BARRIER STRUCTURES GROWN BY MBE [J].

INATA, T ;

MUTO, S ;

NAKATA, Y ;

FUJII, T ;

OHNISHI, H ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12) :L983-L985

[3] EFFECT OF SILICON DOPING PROFILE ON IV CHARACTERISTICS OF AN ALGAAS/GAAS RESONANT TUNNELING BARRIER STRUCTURE GROWN BY MBE [J].

MUTO, S ;

INATA, T ;

OHNISHI, H ;

YOKOYAMA, N ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (07) :L577-L579

[4] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].

NEAVE, JH ;

JOYCE, BA ;

DOBSON, PJ ;

NORTON, N .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8

[5] RESONANT TUNNELING OSCILLATIONS IN A GAAS-ALXGA1-XAS HETEROSTRUCTURE AT ROOM-TEMPERATURE [J].

SHEWCHUK, TJ ;

CHAPIN, PC ;

COLEMAN, PD ;

KOPP, W ;

FISCHER, R ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :508-510

[6] EXTREMELY FLAT INTERFACES IN GAAS ALGAAS QUANTUM-WELLS GROWN ON GAAS (411) A SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

SHIMOMURA, S ;

WAKEJIMA, A ;

ADACHI, A ;

OKAMOTO, Y ;

SANO, N ;

MURASE, K ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (12A) :L1728-L1731

[7] GaAs/Al0.3Ga0.7As resonant tunneling diodes with atomically flat interfaces grown on (411)A GaAs substrates by MBE [J].

Shimomura, S ;

Shinohara, K ;

Kasahara, K ;

Motokawa, T ;

Adachi, A ;

Okamoto, Y ;

Sano, N ;

Hiyamizu, S .

SOLID-STATE ELECTRONICS, 1996, 40 (1-8) :417-420

[8] EXTREMELY FLAT INTERFACES IN GAAS/ALGAAS QUANTUM-WELLS WITH HIGH AL CONTENT (0.7) GROWN ON GAAS (411)A SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

SHIMOMURA, S ;

KANEKO, S ;

MOTOKAWA, T ;

SHINOHARA, K ;

ADACHI, A ;

OKAMOTO, Y ;

SANO, N ;

MURASE, K ;

HIYAMIZU, S .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :409-414

[9] MUCH IMPROVED INTERFACES IN GAAS/ALAS QUANTUM-WELLS GROWN ON (411)A GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

SHIMOMURA, S ;

SHINOHARA, K ;

KITADA, T ;

HIYAMIZU, S ;

TSUDA, Y ;

SANO, N ;

ADACHI, A ;

OKAMOTO, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02) :696-698

[10]

Shinohara K, 1996, SEMICOND SCI TECH, V11, P125, DOI 10.1088/0268-1242/11/1/001

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