Characterization of RuO2 thin films deposited on Si by metal-organic chemical vapor deposition

We report characterization of RuO2 thin films, deposited on Si substrates by metal-organic chemical vapor deposition (MOCVD), by scanning electron microscopy, X-ray diffraction, electrical conductivity, spectrophotometry, ellipsometry and Raman scattering measurements. As-deposited RuO2 films are specular, crack free, and well adherent on the substrate. The Auger electron spectroscopy depth profile shows good compositional uniformity across the thickness of the films. As confirmed by X-ray investigations, the films crystallize with the correct rutile structure. The results of the electrical and optical studies of the MOCVD RuO2 films show a metallic character of these films. The results of Raman investigation indicate that a nearly strain free and high quality RuO2 thin film could be deposited on a Si substrate by MOCVD.