Bond formation in ion beam synthesised amorphous gallium nitride

被引：12

作者：

Almeida, SA

Silva, SRP ^{[1
]}

Sealy, BJ

Watts, JF

机构：

[1] Univ Surrey, Sch Mech & Mat Engn, Guildford GU2 5XH, Surrey, England

[2] Univ Surrey, Sch Elect Engn Informat Technol & Math, Guildford GU2 5XH, Surrey, England

来源：

THIN SOLID FILMS | 1999年 / 343卷

关键词：

amorphous materials; infrared spectroscopy; Fourier transform infrared spectroscopy (FTIR); X-ray photoelectron spectroscopy (XPS); GaN;

D O I：

10.1016/S0040-6090(98)01696-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A combination of ion implantation and plasma enhanced chemical vapour deposition (PECVD) has been used to synthesise amorphous gallium nitride (a-GaN). This was achieved by implanting PECVD amorphous silicon nitride (a-SiN(x):H) films with 75 keV Ga(+) ions at room temperature. A study of an entire range of a-SiN(x):H films with different compositions has enabled the choice of an optimum composition of the substrate for Ga implants. An FTIR study reveals the presence of GaN bond vibrations in the N rich samples. This complements the X-ray photoelectron spectroscopy results that confirm the presence of GaN bonds in samples. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：632 / 636

页数：5

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