Impact of Electron-Impurity Scattering on the Spin Relaxation Time in Graphene: A First-Principles Study

被引：39

作者：

Fedorov, Dmitry V. ^{[1
,2
]}

Gradhand, Martin ^{[1
,3
]}

Ostanin, Sergey ^{[1
]}

Maznichenko, Igor V. ^{[2
]}

Ernst, Arthur ^{[1
,2
]}

Fabian, Jaroslav ^{[4
]}

Mertig, Ingrid ^{[1
,2
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[2] Univ Halle Wittenberg, Inst Phys, D-06099 Halle, Germany

[3] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[4] Univ Regensburg, Inst Theoret Phys, D-93040 Regensburg, Germany

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 110卷 / 15期

关键词：

SPINTRONICS; TRANSPORT; DYNAMICS;

D O I：

10.1103/PhysRevLett.110.156602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of electron-impurity scattering on momentum and spin relaxation times in graphene is studied by means of relativistic ab initio calculations. Assuming carbon and silicon adatoms as natural impurities in graphene, we are able to simulate fast spin relaxation observed experimentally. We investigate the dependence of the relaxation times on the impurity position and demonstrate that C or Si adatoms act as real-space spin hot spots inducing spin-flip rates about 5 orders of magnitude larger than those of in-plane impurities. This fact confirms the hypothesis that the adatom-induced spin-orbit coupling leads to fast spin relaxation in graphene. DOI: 10.1103/PhysRevLett.110.156602

引用

页数：4

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