Toward Wafer Scale Fabrication of Graphene Based Spin Valve Devices

被引:173
作者
Avsar, Ahmet [3 ,4 ]
Yang, Tsung-Yeh [5 ,6 ]
Bae, Sukang [1 ,2 ]
Balakrishnan, Jayakumar [3 ,4 ]
Volmer, Frank [5 ,6 ]
Jaiswal, Manu [3 ,4 ]
Yi, Zheng [1 ,2 ,3 ,4 ]
Ali, Syed Rizwan [5 ,6 ]
Guentherodt, Gernot [5 ,6 ]
Hong, Byung Hee [1 ,2 ]
Beschoten, Bernd [5 ,6 ]
Oezyilmaz, Barbaros [3 ,4 ,7 ,8 ]
机构
[1] Sungkyunkwan Univ, Dept Chem, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Dept Chem, Ctr Human Interface Nanotechnol HINT, Suwon 440746, South Korea
[3] Natl Univ Singapore, Graphene Res Ctr, Singapore 117542, Singapore
[4] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
[5] Rhein Westfal TH Aachen, Inst Phys 2, D-52074 Aachen, Germany
[6] Julich Aachen Res Alliance, JARA Fundamentals Future Informat Technol, Aachen, Germany
[7] Natl Univ Singapore, Fac Engn, Singapore 117576, Singapore
[8] NUS Grad Sch Integrat Sci & Engn NGS, Singapore 117456, Singapore
基金
新加坡国家研究基金会;
关键词
Spin transport; Hanle precession; graphene; CVD growth; ripple; CHEMICAL-VAPOR-DEPOSITION; BILAYER GRAPHENE; ROOM-TEMPERATURE; FILMS; PRECESSION; TRANSPORT; DEFECTS; FOILS;
D O I
10.1021/nl200714q
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate injection, transport, and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single layer and bilayer graphene. We observe spin relaxation times comparable to those reported for exfoliated graphene samples demonstrating that chemical vapor deposition specific structural differences such as nanoripples do not limit spin transport in the present samples. Our observations make Cu-CVD graphene a promising material of choice for large scale spintronic applications.
引用
收藏
页码:2363 / 2368
页数:6
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