Transport of chemically active species in plasma reactors for etching

被引:11
作者
Martisovits, V
Zahoran, M
机构
[1] Faculty of Mathematics and Physics, Comenius University, 842 15 Bratislava
关键词
D O I
10.1088/0963-0252/6/3/005
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
The one-dimensional transport of the neutral reactive species in the planar reactor is studied theoreticallgt to draw conclusions on the reactor performance at maximum etching rate. The etching rate is calculated as a function of the reactant flux entering the reactor for various flux densities of desorbing product from the etched surface. An influence of the mutual diffusion of reactant and product on the etching rate is shown together with respective concentrations of reactant and reaction product in the reactor. The theory is compared with experimental results corresponding to etching of aluminium by chlorine. A method of in situ monitoring of the etching rate ie uniformity is also presented.
引用
收藏
页码:280 / 297
页数:18
相关论文
共 26 条
[1]   MULTIPLE STEADY-STATES IN A RADIO-FREQUENCY CHLORINE GLOW-DISCHARGE [J].
AYDIL, ES ;
ECONOMOU, DJ .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) :109-114
[2]   THE VERY HIGH-RATE PLASMA-JET DRY ETCHING TECHNIQUE [J].
BARDOS, L ;
BERG, S ;
BLOM, HO ;
BARKLUND, AM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (05) :1587-1591
[3]   SUPERHIGH-RATE PLASMA-JET ETCHING OF SILICON [J].
BARDOS, L ;
BERG, S ;
BLOM, HO .
APPLIED PHYSICS LETTERS, 1989, 55 (16) :1615-1617
[5]   REACTION OF ATOMIC AND MOLECULAR CHLORINE WITH ALUMINUM [J].
DANNER, DA ;
HESS, DW .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) :940-947
[6]  
ECONOMOU D, 1991, SOLID STATE TECHNOL, V34, P107
[7]   UNIFORMITY OF ETCHING IN PARALLEL PLATE PLASMA REACTORS [J].
ECONOMOU, DJ ;
PARK, SK ;
WILLIAMS, GD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (01) :188-198
[8]  
Einspruch N G, 1984, VLSI ELECT MICROSTRU, V8
[9]   AMORPHOUS-SILICON DEPOSITION RATES IN DIODE AND TRIODE DISCHARGES [J].
GALLAGHER, A .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) :1369-1373
[10]   ELECTRON AND ION DISTRIBUTION-FUNCTIONS IN RF AND MICROWAVE PLASMAS [J].
KORTSHAGEN, U .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1995, 4 (02) :172-182