Electrically addressing a single self-assembled quantum dot

被引:34
作者
Ellis, DJP
Bennett, AJ
Shields, AJ
Atkinson, P
Ritchie, DA
机构
[1] Toshiba Res Europe Ltd, Cambridge Res Lab, Cambridge CB4 0WE, England
[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1063/1.2190451
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the use of an aperture in an aluminum oxide layer to restrict current injection into a single self-assembled InAs quantum dot from an ensemble of such dots within a large mesa. The insulating aperture is formed through the wet oxidation of a layer of AlAs. Under photoluminescence we observe that only one quantum dot in the ensemble exhibits a Stark shift, and that the same single dot is visible under electroluminescence. Autocorrelation measurements performed on the electroluminescence confirm that we are observing emission from a single quantum dot. (c) 2006 American Institute of Physics.
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页数:3
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