Proposed two-level acceptor-donor (AD) center and the nature of switching traps in irradiated MOS structures

被引：14

作者：

Pershenkov, VS

Cherepko, SV

Sogoyan, AV

Belyakov, VV

Ulimov, VN

Abramov, VV

Shalnov, AV

Rusanovsky, VI

机构：

[1] MOSCOW SPECIALIZED ELECT SYST,MOSCOW,RUSSIA

[2] MOSCOW SCI INSTRUMENTS RES INST,MOSCOW,RUSSIA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 06期

关键词：

D O I：

10.1109/23.556839

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A phenomenological model of switching traps in irradiated metal-oxide-semiconductor (MOS) structures is presented. After electron capture, E(gamma)' center is supposed to be transformed into new defect that is responsible for switching behavior. This new defect is assumed to have two energy levels (acceptor- and donor-like) and could easily communicate with substrate free carriers. Energy level position of the E(gamma)', center, latent build-up of interface traps and negative oxide-trapped charge are also discussed.

引用

收藏

页码：2579 / 2586

页数：8

相关论文

共 29 条

[1] MOSFET AND MOS CAPACITOR RESPONSES TO IONIZING-RADIATION [J].

BENEDETTO, JM ;

BOESCH, HE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1461-1466

[2] TIME-DEPENDENT HOLE AND ELECTRON TRAPPING EFFECTS IN SIMOX BURIED OXIDES [J].

BOESCH, HE ;

TAYLOR, TL ;

HITE, LR ;

BAILEY, WE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) :1982-1989

[3] Electron spin resonance evidence that E'(gamma) centers can behave as switching oxide traps [J].

Conley, JF ;

Lenahan, PM ;

Lelis, AJ ;

Oldham, TR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1995, 42 (06) :1744-1749

[4]

EMELIANOV VV, 1996, UNPUB 1996 NSREC IND

[5]

EMELIANOV VV, IEEE T NUCL SCI, V43, P805

[6] NEW INSIGHTS INTO RADIATION-INDUCED OXIDE-TRAP CHARGE THROUGH THERMALLY-STIMULATED-CURRENT MEASUREMENT AND ANALYSIS [J].

FLEETWOOD, DM ;

MILLER, SL ;

REBER, RA ;

MCWHORTER, PJ ;

WINOKUR, PS ;

SHANEYFELT, MR ;

SCHWANK, JR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) :2192-2203

[7] Effects of interface traps and border traps on MOS postirradiation annealing response [J].

Fleetwood, DM ;

Warren, WL ;

Schwank, JR ;

Winokur, PS ;

Shaneyfelt, MR ;

Riewe, LC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1995, 42 (06) :1698-1707

[8] EFFECTS OF OXIDE TRAPS, INTERFACE TRAPS, AND BORDER TRAPS ON METAL-OXIDE-SEMICONDUCTOR DEVICES [J].

FLEETWOOD, DM ;

WINOKUR, PS ;

REBER, RA ;

MEISENHEIMER, TL ;

SCHWANK, JR ;

SHANEYFELT, MR ;

RIEWE, LC .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (10) :5058-5074

[9] LONG-TERM ANNEALING STUDY OF MIDGAP INTERFACE-TRAP CHARGE NEUTRALITY [J].

FLEETWOOD, DM .

APPLIED PHYSICS LETTERS, 1992, 60 (23) :2883-2885

[10] USING LABORATORY X-RAY AND CO-60 IRRADIATIONS TO PREDICT CMOS DEVICE RESPONSE IN STRATEGIC AND SPACE ENVIRONMENTS [J].

FLEETWOOD, DM ;

WINOKUR, PS ;

SCHWANK, JR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1497-1505