Demonstrative experiment for single-ion implantation technique using highly charged ions

被引：16

作者：

Yoshiyasu, N ^{[1
]}

Takahashi, S

Shibata, MA

Shimizu, H

Nagata, K

Nakamura, N

Tona, M

Sakurai, M

Yamada, C

Ohtani, S

机构：

[1] Univ Electrocommun, Dept Appl Phys & Chem, Chofu, Tokyo 1828585, Japan

[2] Univ Electrocommun, Inst Laser Sci, Chofu, Tokyo 1828585, Japan

[3] ULVAC PHI Inc, Chigasaki, Kanagawa 2530084, Japan

[4] Japan Sci & Technol Agcy, Chofu, Tokyo 1828585, Japan

[5] Kobe Univ, Dept Phys, Kobe, Hyogo 6578501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 2A期

关键词：

highly charged ion; single-ion implantation; secondary electron;

D O I：

10.1143/JJAP.45.995

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

When highly charged ions were implanted on a graphite surface with monitoring of secondary electrons emitted at the point of incidence, dot structures on the surface, as the imprint of ion incidence, were observed by a scanning tunneling microscope (STM). The number of events of secondary electron emission and the number of imprints coincided, which indicates that a method of detecting incident events of ion implantation of almost 100% efficiency has been established by using highly charged ions.

引用

页码：995 / 997

页数：3

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