Impact of three-dimensional lateral current flow on ultrashallow spreading resistance profiles

被引：7

作者：

Clarysse, T

Caymax, M

Vandervorst, W

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 13期

关键词：

D O I：

10.1063/1.1464224

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The spreading resistance probe (SRP) is a widely used measurement tool for electrical characterization of Si structures. From the measured spreading resistance depth profile, the underlying electrically active dopant profile can be extracted through the application of a series of specific software corrections. In this letter, it is shown that for sub-100 nm deep structures a new type of correction is needed in order to account for the impact of three-dimensional lateral current flow through the conductive surface sublayers located above the actual measurement depth. (C) 2002 American Institute of Physics.

引用

页码：2407 / 2409

页数：3

共 11 条

[1]

BORDEN P, 2001, P 6 INT WORKSH FABR, P161

[2]

BRENNAN R, 1995, P 3 INT WORKSH MEAS

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