Real time observations of surface reactions during a-Si:H deposition or H-2 plasma annealing by using FT-IR-ATR

被引：23

作者：

Miyoshi, Y ^{[1
]}

Yoshida, Y ^{[1
]}

Miyazaki, S ^{[1
]}

Hirose, M ^{[1
]}

机构：

[1] HIROSHIMA UNIV, DEPT ELECT ENGN, HIGASHIHIROSHIMA, HIROSHIMA 739, JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1996年 / 198卷

关键词：

D O I：

10.1016/0022-3093(96)00032-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The hydrogen bonding features of reacting film surfaces during a-Si:H deposition, H-2 or D-2 plasma treatments, have been investigated by employing a real-time, in-situ Fourier-transform infrared attenuated total reflection (FT-IR-ATR) technique. It is shown that SiHx (x greater than or equal to 2) bonds are the predominant surface products during the a-Si:H deposition. They are decreased by H-2 plasma annealing while SiH bonds are increased, indicating that the higher hydrides on the a-Si:H surface layer are changed to lower hydrides by H-2 plasma annealing.

引用

页码：1029 / 1033

页数：5

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