A simple model for porous silicon photoluminescence line shape

被引：10

作者：

Di Francia, G ^{[1
]}

Iadonisi, G ^{[1
]}

Maddalena, P ^{[1
]}

Migliaccio, M ^{[1
]}

Ninno, D ^{[1
]}

Santamato, E ^{[1
]}

机构：

[1] ENEA, CRIF, CTR RIC FOTOVOLTAICHE, I-80055 PORTICI, NAPOLI, ITALY

来源：

OPTICS COMMUNICATIONS | 1996年 / 127卷 / 1-3期

关键词：

D O I：

10.1016/0030-4018(95)00707-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present a model for porous silicon photoluminescence hue shape analysis based on the quantum wire hypothesis. The porous silicon layer is supposed to be made of isolated quantum wires whose energy gap depends on the their transverse dimension with an inverse square law. The photoluminescence line shape is then obtained by summing over all the wires the contribution of a single wire with an appropriate statistical weight. Experimental results are presented which are in good agreement with the proposed model.

引用

页码：44 / 47

页数：4

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