Multivacancies trapping hydrogen molecules

被引：12

作者：

Mori, T

Otsuka, K

Umehara, N

Ishioka, K

Kitajima, M

Hishita, S

Murakami, K

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 305, Japan

[2] Natl Inst Mat Sci, Mat Engn Lab, Tsukuba, Ibaraki, Japan

[3] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 308卷

关键词：

hydrogen molecule; multi-vacancy; annealing; Si-H;

D O I：

10.1016/S0921-4526(01)00683-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Hydrogen molecule has been observed in ion-implanted silicon and attributed to be trapped in a multi-vacancy (H-2(MV)). In order to clarify the structure of the multi-vacancy trap of H-2(MV), we investigated correlation between thermal annealing of multi-vacancies and H-2(MV). The results indicated that the main multi-vacancy trap is an H-terminated di-vacancy (V2H6) and that it is formed not only by ion-implantation, but also by transformation from larger multi-vacancy such as V-6 and V-10 during hydrogenation. A broad Raman line observed at 2030 cm(-1) may be attributed to the Si-H in the multi-vacancy trap. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：171 / 173

页数：3

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