MOCASEL: A total solution to electron beam lithography simulation

被引:6
作者
Cui, Z [1 ]
机构
[1] Rutherford Appleton Lab, Chilton OX11 8JR, England
来源
EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2 | 1999年 / 3676卷
关键词
D O I
10.1117/12.351122
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Electron beam lithography is favored as one of the options for microlithography of ICs at below 150nm resolution regime. To assist lithography process development, computer simulations ate widely used. Current simulation packages for electron beam lithography are only able to offer simple solutions. A new simulation package MOCASEL is presented in this paper which offers a total solution to many issues encountered in current and future application of e-beam lithography. A number of modules have been built into the package, which can simulate not only 2D and 3D resist profiles on a flat substrate but on a topographical substrate. Proximity effect correction can be simulated to check its effectiveness. Signals from alignment mark detection can be calculated. Heating effect due to e-beam irradiation of resist can be estimated. All these modules are explained in the paper with simulation examples in the form of 2D and 3D resist profiles.
引用
收藏
页码:494 / 505
页数:4
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