Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics

被引：52

作者：

Hinkle, C. L. ^{[1
]}

Sonnet, A. M. ^{[1
]}

Milojevic, M.

Aguirre-Tostado, F. S.

Kim, H. C.

Kim, J.

Wallace, R. M.

Vogel, E. M. ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Elect Engn, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 11期

关键词：

D O I：

10.1063/1.2987428

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of n- and p-type gallium arsenide (GaAs) capacitors show a striking difference in the "accumulation" capacitance frequency dispersion. This difference has been attributed by some to a variation in the oxide growth, possibly due to photoelectrochemical properties of the two substrates. We show that the oxide growth on n- and p-type GaAs substrates is identical when exposed to identical environmental and chemical conditions while still maintaining the diverse electrical characteristics. The difference in electron and hole trap time constants is suggested as the source of the disparity of the frequency dispersion for n- type versus p-type GaAs devices. (c) 2008 American Institute of Physics.

引用

页数：3

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