Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate

被引：24

作者：

Hsu, CL ^{[1
]}

Chang, SJ

Lin, YR

Wu, JM

Lin, TS

Tsai, SY

Chen, IC

机构：

[1] Ming Chi Univ Technol, Dept Elect Engn, Taipei 24301, Taiwan

[2] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[3] Ind Technol Res Inst, Mat Res Labs, Hsinchu 31015, Taiwan

[4] Ind Technol Res Inst, Energy & Resource Labs, Hsinchu 31015, Taiwan

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 02期

关键词：

D O I：

10.1088/0957-4484/17/2/029

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the synthesis of well aligned, high density, vertical single-crystal ZnO nanowires on ITO-buffered Si substrate (ITO is indium tin oxide) at 550 degrees C for 30 min. It was found that the average length and diameter of the ZnO nanowires were around 3.5 mu m and 30 nm, respectively. It was also found that the ZnO nanowires were oriented in the (002) direction with extremely good crystal quality. Furthermore, it was found that In diffusion occur-red at the bottom of the ZnO nanowires.

引用

页码：516 / 519

页数：4

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