Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction

被引：34

作者：

Lee, CT ^{[1
]}

Yu, QX ^{[1
]}

Tang, BT ^{[1
]}

Lee, HY ^{[1
]}

Hwang, FT ^{[1
]}

机构：

[1] Natl Cent Univ, Inst Opt Sci, Chungli 32054, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 22期

关键词：

D O I：

10.1063/1.1376430

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ohmic performance of the ITO/ZnO multilayer deposited on n-type GaN layer was investigated. The best thermal annealing condition achieved for ohmic contact was 5 min at 500 degreesC, in hydrogen ambient. The measured specific contact resistance was 3x10(-4) Omega cm(2). Ohmic formation mechanisms would be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the reduction conduction band offset due to the quantum confinement effects in the thin ZnO layer. (C) 2001 American Institute of Physics.

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页码：3412 / 3414

页数：3

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