Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN

被引：57

作者：

Lin, YJ ^{[1
]}

Lee, CT ^{[1
]}

机构：

[1] Natl Cent Univ, Inst Opt Sci, Chungli 32054, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 24期

关键词：

D O I：

10.1063/1.1332827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0x10(-5) Omega cm(2) for the Ti/Al nonalloyed ohmic contacts to (NH4)(2)S-x-treated n-type GaN can be obtained. The nonalloyed ohmic contact formation would be impeded by the native oxide and the hydroxyl induced from the surface treatment of chemical solutions. (C) 2000 American Institute of Physics. [S0003-6951(00)02951-X].

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页码：3986 / 3988

页数：3

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