X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers

被引：50

作者：

Lin, YJ ^{[1
]}

Tsai, CD ^{[1
]}

Lyu, YT ^{[1
]}

Lee, CT ^{[1
]}

机构：

[1] Natl Cent Univ, Inst Opt Sci, Chungli, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 05期

关键词：

D O I：

10.1063/1.127086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present here the passivation mechanism and the chemistry of an (NH4)(2)S-x-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)(2)S-x treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies. (C) 2000 American Institute of Physics. [S0003-6951(00)00231-X].

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页码：687 / 689

页数：3

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