Performance characterization of InGaP schottky contact with ITO transparent electrodes

We present the Schottky performance of transparent ITO on a wide bandgap InGaP semiconductor. For a transparent ITO Schottky electrode on InGaP, a transmittance of higher than 0.9, and a refractive index of 1.88 for a wavelength of 820 nm were obtained. We measured its associated resistivity as 1.94 x 10(-3) Ohm-cm after annealing at 300 degrees C for 60 min under oxygen ambience. The effect of the thermal annealing temperature on the crystallization of ITO was examined by x-ray diffraction. As well an associated Schottky barrier height of 0.93 eV and an ideality factor of 1.07 were found using the Schottky diode configuration. The results indicate that ITO is a promising transparent Schottky material for electrooptical devices based on InGaP structures.